收藏本站
RFD3055LE, RFD3055LESM
Typical Performance Curves Unless Otherwise Speci?ed (Continued)
100
15
If R = 0
t AV = (L)(I AS )/(1.3*RATED BV DSS - V DD )
If R ≠ 0
t AV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS - V DD ) +1]
12
V GS = 10V
V GS = 5V
V GS = 4V
10
STARTING T J = 25 o C
9
V GS = 3.5V
STARTING T J = 150 o C
6
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
3
1
0
T C = 25 o C
V GS = 3V
0.001
0.01
0.1
1
10
0
1 2 3
4
t AV , TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
15
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
150
12
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
V DD = 15V
I D = 3A
I D = 11A
I D = 5A
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
T C = 25 o C
120
9
6
T J = 25 o C
90
3
0
T J = 175 o C
T J = -55 o C
60
2
3
4
5
2
4 6 8
10
150
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 8. TRANSFER CHARACTERISTICS
V GS = 4.5V, V DD = 30V, I D = 8A
V GS , GATE TO SOURCE VOLTAGE (V)
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.5
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
t r
2.0
100
1.5
t f
50
0
t d(OFF)
t d(ON)
1.0
0.5
V GS = 10V, I D = 11A
0
10
20
30
40
50
-80
-40
0
40
80
120
160
200
R GS , GATE TO SOURCE RESISTANCE ( ? )
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
?2002 Fairchild Semiconductor Corporation
T J , JUNCTION TEMPERATURE ( o C)
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
RFD3055LE, RFD3055LESM Rev. C0
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
RFP50N06 MOSFET N-CH 60V 50A TO-220AB
RFRXD0920-I/LQ MODULE RCVR 868/915MHZ ASK/FSK
RHK005N03T146 MOSFET N-CH 30V 500MA SOT-346
RHP020N06T100 MOSFET N-CH 60V 2A SOT-89
RHP030N03T100 MOSFET N-CH 30V 3A SOT-89
RI-TRP-WEHP-30 RFID GLASS TRANSP R/W 80BIT 23MM
RJ45-XLRM CONVERTER LEAD RJ45-XLR MALE
RJK005N03T146 MOSFET N-CH 30V 500MA SOT-346
相关代理商/技术参数
RFP3055LE 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP3055LE_Q 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFP3055LES2357 制造商:Rochester Electronics LLC 功能描述:- Bulk
RFP3055RLE 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-220AB
RFP3055RLEP2 制造商:Harris Corporation 功能描述:
RFP30N06LE 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
RFP30N06LE 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC TO-220
RFP30N06LE_NL 制造商:Fairchild Semiconductor Corporation 功能描述: